? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c, r gs = 1m ? 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 130 a i dm t c = 25 c, pulse width limited by t jm 440 a i a t c = 25 c40a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150c 20 v/ns p d t c = 25 c 900 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 300 v v gs(th) v ds = v gs , i d = 8ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 60a, note 1 19 m ? gigamos tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode IXFN160N30T either source terminal s can be used as the source terminal or the kelvin source ( gate return ) terminal. ds100128(03/09) minibloc, sot-227 e153432 g d s s g = gate d = drain s = source v dss = 300v i d25 = 130a r ds(on) 19m ? ? ? ? ? t rr 200ns features z international standard package z minibloc, with aluminium nitride isolation z isolation voltage 2500 v~ z high current handling capability z fast intrinsic diode z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications advance technical information www..net
ixys reserves the right to change limits, test conditions, and dimensions. IXFN160N30T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. sot-227b (ixfn) outline (m4 screws (4x) supplied) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 100 160 s c iss 28 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1770 pf c rss 125 pf t d(on) 37 ns t r 38 ns t d(off) 105 ns t f 25 ns q g(on) 335 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 80a 123 nc q gd 56 nc r thjc 0.138 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 160 a i sm repetitive, pulse width limited by t jm 640 a v sd i f = 60a, v gs = 0v, note 1 1.3 v t rr 200 ns q rm 1.09 c i rm 13 a resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 80a r g = 1 ? (external) i f = 80a, v gs = 0v -di/dt = 100a/ s v r = 75v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. www..net
? 2009 ixys corporation, all rights reserved IXFN160N30T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ds - volts i d - amperes v gs = 10v 7v 6 v 5 v 5.5 v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 7v 5 v 5.5 v 6 v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 01234567 v ds - volts i d - amperes v gs = 10v 7v 6 v 5 v fig. 4. r ds(on) normalized to i d = 80a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 160a i d = 80a fig. 5. r ds(on) normalized to i d = 80a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10 v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes www..net
ixys reserves the right to change limits, test conditions, and dimensions. IXFN160N30T ixys ref: f_160n30t (9e)03-23-09 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 q g - nanocoulombs v gs - volts v ds = 150v i d = 80a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds( on ) limit www..net
? 2009 ixys corporation, all rights reserved IXFN160N30T ixys ref: f_160n30t (9e)03-23-09 fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w www..net
|
